v ds i d (at v gs =10v) 32a r ds(on) (at v gs =10v) < 3.2m w r ds(on) (at v gs = 4.5v) < 5m w symbol v ds v gs maximum units parameter 30v drain-source voltage ? latest trench power alphamos ( mos lv) technology ? very low rds(on) at 4.5v gs ? low gate charge ? high current capability ? rohs and halogen-free compliant absolute maximum ratings t a =25c unless otherwise noted v 20 gate-source voltage v 30 g d s top view 1 2 3 4 8 7 6 5 v gs i dm i as e as v ds spike v spike t j , t stg symbol t 10s steady-state steady-state r q jc v w t a =70c 2.7 t a =25c 4.2 100ns 36 c/w c/w maximum junction-to-ambient a d 2.6 64 3 maximum junction-to-case i d power dissipation a p dsm w 16 t c =100c p d 41 t c =25c power dissipation b v 20 gate-source voltage continuous drain current g i dsm 32 25 t c =25c t c =100c max 46 avalanche energy l=0.05mh c avalanche current c 23 junction and storage temperature range 53 continuous drain current t a =70c a 128 c thermal characteristics pulsed drain current c 29 a t a =25c -55 to 150 a mj maximum junction-to-ambient a c/w r q ja 24 53 30 units parameter typ www.freescale.net.cn 1/6 AON6508 30v n-channel alphamos general description features
symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1.2 1.8 2.2 v 2.6 3.2 t j =125c 3.6 4.5 3.6 5 m w g fs 105 s v sd 0.7 1 v i s 48 a c iss 2010 pf c oss 898 pf c rss 124 pf r g 0.9 1.8 2.7 w q g (10v) 36 49 nc q g (4.5v) 17 23 nc q gs 6 nc q gd 8 nc t d(on) 7.5 ns t r 4.0 ns t 37.0 ns v ds =0v, v gs = 20v i s =1a,v gs =0v maximum body-diode continuous current diode forward voltage v gs =4.5v, i d =20a v gs =10v, i d =20a input capacitance dynamic parameters drain-source breakdown voltage electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i d =250 m a, v gs =0v i dss gate-body leakage current v gs =10v, v ds =15v, r l =0.75 w , r =3 w m a zero gate voltage drain current m w reverse transfer capacitance v gs =0v, v ds =15v, f=1mhz v ds =v gs, i d =250 m a v ds =5v, i d =20a v gs =0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =15v, i d =20a turn-on rise time gate drain charge total gate charge gate source charge output capacitance turn-off delaytime r ds(on) static drain-source on-resistance gate resistance forward transconductance switching parameters turn-on delaytime t d(off) 37.0 ns t f 7.5 ns t rr 14 ns q rr 20.3 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. i f =20a, di/dt=500a/ m s r gen =3 w body diode reverse recovery charge body diode reverse recovery time i f =20a, di/dt=500a/ m s turn-off fall time turn-off delaytime a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. single pulse width limited by junction temperat ure t j(max) =150 c. d. the r q ja is the sum of the thermal impedance from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. www.freescale.net.cn 2/6 AON6508 30v n-channel alphamos
typical electrical and thermal characteristics 0 5 10 15 20 25 30 35 40 45 50 0 1 2 3 4 5 6 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 0 1 2 3 4 5 6 0 5 10 15 20 25 30 r ds(on) (m w w w w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =20a v gs =10v i d =20a 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 20 40 60 80 100 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =2.5v 3.5v 4.5v 10v 3v 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 0 2 4 6 8 2 4 6 8 10 r ds(on) (m w w w w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =20a 25 c 125 c www.freescale.net.cn 3/6 AON6508 30v n-channel alphamos
typical electrical and thermal characteristics 17 5 2 10 0 18 0 2 4 6 8 10 0 10 20 30 40 50 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 500 1000 1500 2000 2500 3000 0 5 10 15 20 25 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 100 200 300 400 500 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction-to-ca se c oss c rss v ds =15v i d =20a t j(max) =150 c t c =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe 10 m s 1ms dc r ds(on) t j(max) =150 c t c =25 c 100 m s 10ms 40 (note f) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 z q q q q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse operating area (note f) r q jc =3 c/w www.freescale.net.cn 4/6 AON6508 30v n-channel alphamos
typical electrical and thermal characteristics 0 10 20 30 40 50 0 25 50 75 100 125 150 power dissipation (w) t case ( c) figure 12: power de-rating (note f) 0 10 20 30 40 50 60 70 80 90 100 0 25 50 75 100 125 150 current rating i d (a) t case ( c) figure 13: current de-rating (note f) 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 14: single pulse power rating junction-to- ambient (note h) t a =25 c 40 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 15: normalized maximum transient thermal imp edance (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse ambient (note h) r q ja =64 c/w www.freescale.net.cn 5/6 AON6508 30v n-channel alphamos
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar vdd vgs vgs rg dut - + vdc vgs id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar di/dt i rm rr vdd vdd q = - idt t rr www.freescale.net.cn 6/6 AON6508 30v n-channel alphamos
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